 |
| Quantity: | |
|---|---|
Product introduction: Patterned Sapphire Substrate(“PSS”for short)is manufacturing the pattern with micro-structure on the surface of Sapphire plain film substrate through spin, developing, etching and other processes. Lateral growth technology on the patterned substrate will reduce the defects on epitaxial layer effectively and increase luminous efficiency of LED remarkably.
Application: GaN-based LED, High-power component
| 蓝宝石图形化衬底（Patterned Sapphire Substrate, PSS） | ||
| Item项目 | 2" | 4" |
| Crystal晶体 | LED Grade Sapphire | LED Grade Sapphire |
| Sapphire purity蓝宝石纯度 | ≥99.998% | ≥99.998% |
| Color颜色 | Transparent | Transparent |
| Orientation方向 | C plane tiled M axis 0.20°±0.1° | C plane tiled M axis 0.20°±0.1° |
| Diameter直径 | 50.8±0.1mm | 100±0.2mm |
| Thickness厚度 | 430±10μm | 650±10μm |
| Primary Flat Location定位面方向 | A-axis ± 0.2° | A-axis ± 0.2° |
| Flat Length定位面长度 | 16.0±1.0 mm | 30.0 ±1.0 mm |
| Front side surface抛光面 | Epi-ready patterned surface | Epi-ready patterned surface |
| Back side surface背面 | Fine ground; Ra < 1.2 um | Fine ground; Ra < 1.2 um |
| TTV平坦度 | ≤ 5.0μm | ≤ 10μm |
| BOW弯曲度 | ≤ -10μm | ≤ -20μm |
| Pattern diameter图形直径 | 2.7±0.15 um | 2.7±0.15 um |
| Pattern height图形高度 | 1.6±0.15 um | 1.6±0.15 um |
| Pattern space图形间距 | 0.3±0.15 um | 0.3±0.15 um |
| Pattern arrangement | Close-packed arrangement; hexagonal type | Close-packed arrangement; hexagonal type |
| 图形间距 | ||
| Defective patterns | Total defective area ≦3% of wafer area; Inspection by naked eye added without bright light | Total defective area ≦5% of wafer area; Inspection by naked eye added without bright light |
| 图形缺陷 | ||
| Scratch刮伤 | Visible to naked eye added without bright light; | Visible to naked eye added without bright light; |
| total length < 3mm | total length < 5mm | |
| Package包装 | Clean room, vacuum packing | Clean room, vacuum packing |
